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Built in resistor digital transistor ROHM DTA114EEBTL designed for inverter and interface driver circuit

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Built in resistor digital transistor ROHM DTA114EEBTL designed for inverter and interface driver circuit

Output Voltage(VO(on)) : 300mV@10mA,0.5mA

Input Resistor : 13kΩ

Resistor Ratio : 1.2

Number : 1 PNP Pre-Biased

Collector - Emitter Voltage VCEO : 50V

Description : 1 PNP Pre-Biased 50V SC-75(SOT-416) Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : DTA114EEBTL

Model Number : DTA114EEBTL

Package : SC-75(SOT-416)

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Product Overview

The DTA114E series are PNP digital transistors featuring built-in biasing resistors (R1 = R2 = 10k). This integration simplifies circuit design by eliminating the need for external input resistors, enabling the configuration of inverter circuits with ease. Designed for applications requiring simple on/off condition settings, these transistors are ideal for use in inverters, interfaces, and driver circuits. Complementary NPN types are available in the DTC114E series.

Product Attributes

Brand: ROHM
Type: PNP Digital Transistor (Bias Resistor Built-in Transistor)
Built-in Resistors: R1 = 10k, R2 = 10k

Technical Specifications

Model	Package	VCC (MAX)	IC(MAX)	PD (MAX)	Marking
DTA114EM	VMT3 (SC-105AA)	-50V	-100mA	150mW	14
DTA114EEB	EMT3F (SC-89)	-50V	-100mA	150mW	14
DTA114EE	EMT3 (SOT-416 / SC-75A)	-50V	-100mA	150mW	14
DTA114EUB	UMT3F (SC-85)	-50V	-100mA	200mW	14
DTA114EUA	UMT3 (SOT-323 / SC-70)	-50V	-100mA	200mW	14
DTA114EKA	SMT3 (SOT-346 / SC-59)	-50V	-100mA	200mW	14

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Supply voltage	VCC				-50	V
Input voltage	VIN		-40	to	10	V
Output current	IO				-50	mA
Collector current (MAX)	IC(MAX)*1				-100	mA
Input voltage (OFF)	VI(off)	VCC = -5V, IO = -100A	-	-	-0.5	V
Input voltage (ON)	VI(on)	VO = -0.3V, IO = -10mA	-3.0	-	-	V
Output voltage (on)	VO(on)	IO / II = -10mA / -0.5mA	-	-100	-300	mV
Input current	II	VI = -5V	-	-	-880	A
Output current (off)	IO(off)	VCC = -50V, VI = 0V	-	-	-500	nA
DC current gain	GI	VO = -5V, IO = -5mA	30	-	-	-
Input resistance	R1		7	10	13	k
Resistance ratio	R2/R1		0.8	1.0	1.2	-
Transition frequency	fT*1	VCE = -10V, IE = 5mA, f = 100MHz	-	250	-	MHz
Junction temperature	Tj				150
Range of storage temperature	Tstg		-55	to	+150

Applications

INVERTER
INTERFACE
DRIVER

2403111646_ROHM-DTA114EEBTL_C17590107.pdf

Built in resistor digital transistor ROHM DTA114EEBTL designed for inverter and interface driver circuit Images

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