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N Channel JFET onsemi J109 Transistor for Digital Switching Featuring Low On Resistance and Pb Free

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N Channel JFET onsemi J109 Transistor for Digital Switching Featuring Low On Resistance and Pb Free

Operating Temperature : -55℃~+150℃@(Tj)

Pd - Power Dissipation : 625mW

FET Type : -

Drain Current (Idss) : 40mA@15V

RDS(on) : 12Ω

Gate-Source Breakdown Voltage (Vgss) : 25V

Gate-Source Cutoff Voltage (VGS(off)) : 2V@10nA

Description : 625mW 40mA@15V 12Ω 25V TO-92-3L JFETs RoHS

Mfr. Part # : J109

Model Number : J109

Package : TO-92-3L

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Product Overview

The J109 and MMBFJ108 are N-Channel JFETs designed for digital switching applications requiring very low on-resistance. These devices are sourced from Process 58 and are Pb-Free.

Product Attributes

Brand: ON Semiconductor
Origin: Sourced from Process 58
Certifications: Pb-Free Devices

Technical Specifications

Parameter	Symbol	J109	MMBFJ108	Unit	Notes
MAXIMUM RATINGS
DrainGate Voltage	VDG	25		V
GateSource Voltage	VGS	25		V
Forward Gate Current	IGF	10		mA
Operating and Storage Junction Temperature Range	TJ, TSTG	55 to 150		C
THERMAL CHARACTERISTICS
Total Device Dissipation	PD	625	350	mW	TA = 25C
Derate Above 25C		5.0	2.8	mW/C
Thermal Resistance, JunctiontoCase	R JC	125		C/W	Note 3
Thermal Resistance, JunctiontoAmbient	R JA	200	357	C/W	Note 4
ELECTRICAL CHARACTERISTICS
GateSource Breakdown Voltage	V(BR)GSS	25		V	IG = 10 A, VDS = 0
Gate Reverse Current	IGSS	3.0		nA	VGS = 15 V, VDS = 0, TA = 100C
GateSource CutOff Voltage	VGS(off)	2.0 to 6.0	3.0 to 10.0	V	VDS = 15 V, ID = 10 nA
ZeroGate Voltage Drain Current	IDSS	40	80	mA	VDS = 15 V, VGS = 0, Note 5
DrainSource On Resistance	rDS(on)		8.0		VDS 0.1 V, VGS = 0, MMBFJ108
DrainSource On Resistance	rDS(on)		12		VDS 0.1 V, VGS = 0, J109
DrainGate & SourceGate On Capacitance	Cdg(on), Csg(on)	85		pF	VDS = 0, VGS = 0, f = 1.0 MHz
DrainGate Off Capacitance	Cdg(off)	15		pF	VDS = 0, VGS = 10 V, f = 1.0 MHz
SourceGate Off Capacitance	Csg(off)	15		pF	VDS = 0, VGS = 10 V, f = 1.0 MHz

2410121854_onsemi-J109_C896738.pdf

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