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Surface Mount PNP Resistor Equipped Transistor Nexperia PDTB123ET 215 Ideal for Controlling IC Inputs

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Surface Mount PNP Resistor Equipped Transistor Nexperia PDTB123ET 215 Ideal for Controlling IC Inputs

Emitter-Base Voltage VEBO : 10V

Input Resistor : 2.86kΩ

Resistor Ratio : 1.1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 500mA 250mW Surface Mount SOT-23

Mfr. Part # : PDTB123ET,215

Model Number : PDTB123ET,215

Package : SOT-23

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Product Overview

The Nexperia PDTB123ET is a 500 mA PNP Resistor-Equipped Transistor (RET) housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Designed for digital applications in automotive and industrial segments, this transistor simplifies circuit design and reduces component count due to its built-in bias resistors. It offers a cost-saving alternative for BC807 series in digital applications and is suitable for controlling IC inputs and switching loads. The device is AEC-Q101 qualified, ensuring reliability for demanding applications.

Product Attributes

Brand: Nexperia
Type: PNP Resistor-Equipped Transistor (RET)
Package: SOT23 (TO-236AB)
Qualification: AEC-Q101
NPN Complement: PDTD123ET

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	open base	-	-	-50	V
IO	Output current	-	-	-	-500	mA
R1	Bias resistor 1 (input)	-	1.54	2.2	2.86	k
R2/R1	Bias resistor ratio	-	0.9	1.0	1.1	-
VCBO	Collector-base voltage	open emitter	-	-	-50	V
VEBO	Emitter-base voltage	open collector	-	-	-10	V
VI	Input voltage	positive	-	-	+10	V
VI	Input voltage	negative	-	-	-12	V
Ptot	Total power dissipation	Tamb 25 C [1]	-	-	250	mW
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	+150	C
Tstg	Storage temperature	-	-65	-	+150	C
Rth(j-a)	Thermal resistance from junction to ambient	in free air [1]	-	-	500	K/W
ICBO	Collector-base cut-off current	VCB = -40 V; IE = 0 A	-	-	-100	nA
ICBO	Collector-base cut-off current	VCB = -50 V; IE = 0 A	-	-	-100	nA
ICEO	Collector-emitter cut-off current	VCE = -50 V; IB = 0 A	-	-	-0.5	A
IEBO	Emitter-base cut-off current	VEB = -5 V; IC = 0 A	-	-	-2.0	mA
hFE	DC current gain	VCE = -5 V; IC = -50 mA	40	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = -50 mA; IB = -2.5 mA	-	-	-0.3	V
VI(off)	Off-state input voltage	VCE = -5 V; IC = -100 A	-0.6	-1.1	-1.8	V
VI(on)	On-state input voltage	VCE = -0.3 V; IC = -20 mA	-1.0	-1.5	-2.0	V
Cc	Collector capacitance	VCB = -10 V; IE = ie = 0 A; f = 100 MHz	-	11	-	pF

2410121742_Nexperia-PDTB123ET-215_C455003.pdf

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