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NPN Transistor Nexperia NHDTC143ZUF with Integrated Resistors and 80 Volt Breakdown Voltage in SOT323

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NPN Transistor Nexperia NHDTC143ZUF with Integrated Resistors and 80 Volt Breakdown Voltage in SOT323

Input Resistor : 4.7kΩ

Resistor Ratio : 10

Collector - Emitter Voltage VCEO : 80V

Description : Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 80V 100mA 315mW Surface Mount SOT-323

Mfr. Part # : NHDTC143ZUF

Model Number : NHDTC143ZUF

Package : SOT-323

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Product Overview

The Nexperia NHDTC123JU/143ZU/114YU series comprises NPN Resistor-Equipped Transistors (RETs) in a compact SOT323 (SC-70) SMD plastic package. These transistors offer an 80 V breakdown voltage and a 100 mA output current capability, featuring built-in resistors that simplify circuit design, reduce component count, and lower pick-and-place costs. They are well-suited for digital applications, serving as a cost-effective alternative to the BC846 series, and are ideal for controlling IC inputs and switching loads. The series is AEC-Q101 qualified, ensuring suitability for automotive applications.

Product Attributes

Brand: Nexperia
Package Type: SOT323 (SC-70)
Qualification: AEC-Q101 Qualified

Technical Specifications

Model	R1 (k)	R2 (k)	PNP Complement	VCEO (V)	IO (mA)	Package
NHDTC123JU	2.2	47	NHDTA123JU	80	100	SOT323 (SC-70)
NHDTC143ZU	4.7	47	NHDTA143ZU	80	100	SOT323 (SC-70)
NHDTC114YU	10	47	NHDTA114YU	80	100	SOT323 (SC-70)

Parameter	Conditions	Min	Typ	Max	Unit
Collector-emitter voltage (VCEO)	Open base	-	-	80	V
Output current (IO)	-	-	-	100	mA
Collector-base voltage (VCBO)	Open emitter	-	-	80	V
Emitter-base voltage (VEBO)	Open collector	-	-	7	V
Input voltage (VI) - NHDTC123JU	-	-7	-	+20	V
Input voltage (VI) - NHDTC143ZU	-	-7	-	+30	V
Input voltage (VI) - NHDTC114YU	-	-7	-	+40	V
Collector-base breakdown voltage (V(BR)CBO)	IC = 100 A; IE = 0 A	80	-	-	V
Collector-emitter breakdown voltage (V(BR)CEO)	IC = 2 mA; IB = 0 A	80	-	-	V
Collector-base cut-off current (ICBO)	VCB = 80 V; IE = 0 A	-	-	100	nA
Collector-emitter cut-off current (ICEO)	VCE = 60 V; IB = 0 A	-	-	100	nA
Collector-emitter cut-off current (ICEO)	VCE = 60 V; IB = 0 A; Tj = 150 C	-	-	5	A
Emitter-base cut-off current (IEBO) - NHDTC123JU	VEB = 7 V; IC = 0 A	-	-	270	A
Emitter-base cut-off current (IEBO) - NHDTC143ZU	VEB = 7 V; IC = 0 A	-	-	260	A
Emitter-base cut-off current (IEBO) - NHDTC114YU	VEB = 7 V; IC = 0 A	-	-	230	A
DC current gain (hFE)	VCE = 5 V; IC = 10 mA	100	-	-	-
Collector-emitter saturation voltage (VCEsat)	IC = 10 mA; IB = 0.5 mA	-	-	100	mV
Off-state input voltage (VI(off)) - NHDTC123JU	VCE = 5 V ; IC = 100 A	-	595	500	mV
Off-state input voltage (VI(off)) - NHDTC143ZU	VCE = 5 V ; IC = 100 A	-	625	500	mV
Off-state input voltage (VI(off)) - NHDTC114YU	VCE = 5 V ; IC = 100 A	-	690	500	mV
On-state input voltage (VI(on)) - NHDTC123JU	VCE = 0.3 V ; IC = 10 mA	1.2	0.81	-	V
On-state input voltage (VI(on)) - NHDTC143ZU	VCE = 0.3 V ; IC = 10 mA	1.4	0.95	-	V
On-state input voltage (VI(on)) - NHDTC114YU	VCE = 0.3 V ; IC = 10 mA	1.6	1.22	-	V
Bias resistor 1 (input) (R1) - NHDTC123JU	-	1.54	2.2	2.86	k
Bias resistor 1 (input) (R1) - NHDTC143ZU	-	3.3	4.7	6.1	k
Bias resistor 1 (input) (R1) - NHDTC114YU	-	7	10	13	k
Bias resistor ratio (R2/R1) - NHDTC123JU	-	17	21	26	-
Bias resistor ratio (R2/R1) - NHDTC143ZU	-	8	10	12	-
Bias resistor ratio (R2/R1) - NHDTC114YU	-	3.7	4.7	5.7	-
Transition frequency (fT)	VCE = 5 V; IC = 10 mA; f = 100 MHz	-	170	-	MHz
Collector capacitance (Cc)	VCB = 10 V; IE = ie = 0 A; f = 1 MHz	-	-	2.5	pF

2410121942_Nexperia-NHDTC143ZUF_C3588870.pdf

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