Home > Single, Pre-Biased Bipolar Transistors >

NPN Pre Biased Dual Transistor Device DIODES ADC124EUQ-7 Featuring Epitaxial Planar Die Construction

Product Categories

Bipolar Transistor Arrays [120]
Bridge Rectifiers [1296]
JFETs [73]
Single Bipolar Transistors [2284]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [536]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1334]
SCRs [158]
SCRs - Modules [48]
TRIACs [535]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

NPN Pre Biased Dual Transistor Device DIODES ADC124EUQ-7 Featuring Epitaxial Planar Die Construction

Output Voltage(VO(on)) : 300mV

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 270mW Surface Mount SOT-363

Mfr. Part # : ADC124EUQ-7

Model Number : ADC124EUQ-7

Package : SOT-363

Contact Now

Product Overview

The ADC124EUQ is an NPN pre-biased dual transistor in a SOT363 package. It features epitaxial planar die construction and built-in biasing resistors. This device is totally lead-free, fully RoHS compliant, and halogen and antimony free, making it a "Green" device. It is also AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.

Product Attributes

Brand: Diodes Incorporated
Die Construction: Epitaxial Planar
Biasing: Built-In Resistors
Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Automotive Qualification: AEC-Q101 Qualified, PPAP Capable, IATF 16949 Certified Facilities
Case Material: Molded Plastic, "Green" Molding Compound
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (Approximate)

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit	Test Condition
Supply Voltage	VCC			50	V
Input Voltage	VIN	-10		+40	V
Output Current (Max)	IC (Max)			100	mA
Power Dissipation	PD			270	mW	@ TA = +25C, Mounted on FR4 PC Board with minimum recommended pad layout. 150mW per element must not be exceeded.
Thermal Resistance, Junction to Ambient Air	RJA		450		C/W	@ TA = +25C, Mounted on FR4 PC Board with minimum recommended pad layout.
Operating and Storage Temperature Range	TJ, TSTG	-55		+150	C
Input Voltage (Off)	VI(off)	0.5	1.1		V	VCC = 5V, IO = 100A
Input Voltage (On)	VI(on)		1.9	3.0	V	VO = 0.3V, IO = 5mA
Output Voltage (On)	VO(on)		0.1	0.3	V	IO/II = 10mA / 0.5mA
Input Current	II			0.36	mA	VI = 5V
Output Current (Off)	IO(off)			0.5	A	VCC = 50V, VI = 0V
DC Current Gain	GI	56				VO = 5V, IO = 5mA
Input Resistor (R1) Tolerance	R1	-30		+30	%
Resistance Ratio Tolerance	(R2/R1)	-20		+20	%
Gain-Bandwidth Product	fT		250		MHz	VCE = 10V, IE = 5mA, f = 100MHz (Transistor - For Reference Only)

2308101548_DIODES-ADC124EUQ-7_C3588566.pdf

China NPN Pre Biased Dual Transistor Device DIODES ADC124EUQ-7 Featuring Epitaxial Planar Die Construction wholesale

NPN Pre Biased Dual Transistor Device DIODES ADC124EUQ-7 Featuring Epitaxial Planar Die Construction Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!