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Fast Switching SOT23 Schottky Diode JSCJ BAT54C-G Plastic Encapsulated Ideal for Electronic Circuits

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Fast Switching SOT23 Schottky Diode JSCJ BAT54C-G Plastic Encapsulated Ideal for Electronic Circuits

Non-Repetitive Peak Forward Surge Current : 600mA

Reverse Leakage Current (Ir) : 2uA@25V

Voltage - DC Reverse (Vr) (Max) : 30V

Voltage - Forward(Vf@If) : 1V@100mA

Current - Rectified : 200mA

Description : Diode 30V 200mA Surface Mount SOT-23

Mfr. Part # : BAT54C-G

Model Number : BAT54C-G

Package : SOT-23

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Schottky Barrier Diode BAT54/A/C/S

The BAT54/A/C/S is a Schottky barrier diode in a SOT-23 plastic-encapsulated package. It features extremely fast switching speed, making it suitable for various electronic applications requiring rapid response times.

Product Attributes

Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Package Type: SOT-23
Material: Plastic-Encapsulated
Marking: BAT54, BAT54A, BAT54C, BAT54S
Molding Compound: Green (Solid dot) or Normal

Technical Specifications

Parameter	Symbol	BAT54/A/C/S Value	Unit	Test Conditions
Maximum Ratings
Peak Repetitive Reverse Voltage	VRRM	30	V	Ta=25 unless otherwise noted
Working Peak Reverse Voltage	VRWM	30	V	Ta=25 unless otherwise noted
DC Blocking Voltage	VR	30	V	Ta=25 unless otherwise noted
Forward Continuous Current	IFM	200	mA	Ta=25 unless otherwise noted
Non-repetitive Peak Forward Surge Current	IFSM	600	mA	@ t=8.3ms, Ta=25 unless otherwise noted
Repetitive Peak Forward Current	IFRM	300	mA	@ t1s, 0.5, Ta=25 unless otherwise noted
Power Dissipation	PD	200	mW	Ta=25 unless otherwise noted
Thermal Resistance from Junction to Ambient	RJA	500	/W	Ta=25 unless otherwise noted
Junction Temperature	Tj	125		Ta=25 unless otherwise noted
Storage Temperature	Tstg	-55~+150		Ta=25 unless otherwise noted
Electrical Characteristics
Reverse voltage	V(BR)	30	V	IR=100A
Forward voltage	VF	0.24	V	IF1=0.1mA
		0.32	V	IF2=1mA
		0.40	V	IF3=10mA
		0.50	V	IF4=30mA
		1	V	IF5=100mA
Reverse current	IR	2	A	VR=25V
Diode capacitance	CD	10	pF	VR=1V, f=1MHz
Reverse recovery time	trr	5	ns	IF=IR=10mA, Irr=0.1IR, RL=100

2410121246_JSCJ-BAT54C-G_C164910.pdf

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