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DIODES S GBU806 TU LT glass passivated bridge rectifier designed for 1000V PRV and PCB applications

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DIODES S GBU806 TU LT glass passivated bridge rectifier designed for 1000V PRV and PCB applications

Non-Repetitive Peak Forward Surge Current : 440A

Operating Junction Temperature Range : -55℃~+150℃@(Tj)

Voltage - Forward(Vf@If) : 1.2V@8A

Current - Rectified : 8A

Voltage - DC Reverse(Vr) : 600V

Description : 440A 1.2V@8A 8A 600V GBU Bridge Rectifiers RoHS

Mfr. Part # : S-GBU806-TU-LT

Model Number : S-GBU806-TU-LT

Package : GBU

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GBU804 thru GBU810 GLASS PASSIVATED BRIDGE RECTIFIERS

The GBU804 thru GBU810 series are high-performance glass-passivated bridge rectifiers designed for printed circuit board applications. They offer a high rating to 1000V PRV and are constructed using a reliable, low-cost molded plastic technique. The plastic material meets UL flammability classification 94V-0, and the series is UL Recognized.

Product Attributes

  • Brand: SEMICONDUCTOR LITE-ON
  • Material: Molded plastic
  • Flammability Classification: UL 94V-0
  • UL Recognition File #: E95060
  • Polarity: Symbols molded on body
  • Weight: 0.15 ounces, 4.0 grams
  • Mounting Position: Any

Technical Specifications

Model Maximum Recurrent Peak Reverse Voltage (V) Maximum RMS Voltage (V) Maximum DC Blocking Voltage (V) Maximum Average Forward Rectified Current (A) @TC=100 C (with heatsink) Maximum forward Voltage at 4.0A DC (V) Maximum forward Voltage at 8.0A DC (V) Peak Forward Surge Current (A) 8.3ms single half sine-wave Typical Junction Capacitance per element (pF) Maximum DC Reverse Current (uA) @TJ =125 C Typical Thermal Resistance (Note 2) (C/W)
GBU804 400 280 400 8.0 1.0 1.2 200 60 500 3.0
GBU806 600 420 600 8.0 1.0 1.2 200 60 500 3.0
GBU808 800 560 800 8.0 1.0 1.2 200 60 500 3.0
GBU810 1000 700 1000 8.0 1.0 1.2 200 60 500 3.0

Operating and Storage Temperature

Parameter Symbol Rating Unit
Operating Temperature Range TJ -55 to +150 C
Storage Temperature Range TSTG -55 to +150 C

Additional Specifications

Parameter Symbol Rating Unit Condition
Rating for fusing (3ms t 8.3m) I2t 166 A2S
Peak Forward Surge Current IFSM 220 A 8.3ms single half sine-wave
Peak Forward Surge Current IFSM 440 A 1.0ms single half sine-wave
Typical Thermal Resistance (without heatsink) R0JC 5.6 C/W
Maximum DC Reverse Current IR 5.0 uA @TJ =25 C

1810301817_DIODES-S-GBU806-TU-LT_C266391.pdf


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