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QFN 8x8 Package Silicon Carbide Diode Wolfspeed C6D08065Q-TR 650 Volt 8 Amp Schottky Barrier Diode

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QFN 8x8 Package Silicon Carbide Diode Wolfspeed C6D08065Q-TR 650 Volt 8 Amp Schottky Barrier Diode

Voltage - DC Reverse (Vr) (Max) : 650V

Voltage - Forward(Vf@If) : 1.5V@8A

Reverse Leakage Current (Ir) : 20uA@650V

Current - Rectified : 28A

Description : 650V 1.5V@8A 28A QFN-4(8x8) Single Diodes RoHS

Mfr. Part # : C6D08065Q-TR

Model Number : C6D08065Q-TR

Package : QFN-4(8x8)

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Product Overview

The C6D08065Q is a 6th Generation 650 V, 8 A Silicon Carbide (SiC) Schottky Barrier Diode. Leveraging the performance advantages of SiC, this diode enables power electronics systems to achieve higher efficiency standards, operate at higher frequencies, and reach greater power densities compared to silicon-based solutions. Its design offers a low forward voltage (VF) drop with a positive temperature coefficient, zero reverse recovery current, and temperature-independent switching behavior. The low profile, low inductance QFN 8x8 package facilitates easy paralleling for various application demands without concerns of thermal runaway. This contributes to reduced cooling requirements, improved thermal performance, and ultimately lower overall system costs across a range of applications.

Product Attributes

Brand: Wolfspeed
Material: Silicon Carbide (SiC)
Package Type: QFN 8x8
Marking: C6D08065Q
Certifications: REACh, RoHS, Halogen-Free compliant

Technical Specifications

Parameter	Symbol	Value	Unit	Test Conditions	Notes
Repetitive Peak Reverse Voltage	VRRM	650	V	DC Blocking Voltage
Continuous Forward Current	IF	8	A	TJ = 125 C	Fig. 3
Non-Repetitive Peak Forward Surge Current	IFSM	51	A	TC = 110 C, tp = 10 ms, Half Sine Wave
Power Dissipation	Ptot	36	W	TJ = 110 C	Fig. 4
i2t Value	i2t	13	As	TC = 110 C, tp = 10 ms
Forward Voltage	VF	1.37	V	IF = 8 A, Tj = 175 C	Fig. 1
Reverse Current	IR	15	A	VR = 650 V, Tj = 175 C	Fig. 2
Total Capacitive Charge	QC	29	nC	VR = 400 V, Tj = 25 C	Fig. 5
Total Capacitance	C	56	pF	VR = 200 V, Tj = 25 C, f = 1 MHz	Fig. 6
Capacitance Stored Energy	Ec	4.4	J	VR = 400 V	Fig. 7
Thermal Resistance, Junction to Case (Typ.)	R, JC	1.8	C / W
Junction Temperature	Tj	-55 to +175	C
Case & Storage Temperature	Tc	-55 to +150	C
Maximum Processing Temperature	TPROC	325	C	10 min max.
ESD Human Body Model	HBM	8000	V		Class 3B
ESD Charge Device Model	CDM	1000	V		Class C3

Applications: Enterprise Power, Server & Telecom Power Supplies, Switched Mode Power Supplies, Industrial Power Supplies, Boost Power Factor Correction, Bootstrap Diode, LLC Clamping.

2411272357_Wolfspeed-C6D08065Q-TR_C7459214.pdf

QFN 8x8 Package Silicon Carbide Diode Wolfspeed C6D08065Q-TR 650 Volt 8 Amp Schottky Barrier Diode Images

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