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Lead free silicon diode PJSEMI BAV21WS with fast reverse recovery and low profile surface mount package

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Lead free silicon diode PJSEMI BAV21WS with fast reverse recovery and low profile surface mount package

Non-Repetitive Peak Forward Surge Current : 9A

Reverse Leakage Current (Ir) : 100nA

Reverse Recovery Time (trr) : 50ns

Diode Configuration : Independent

Voltage - DC Reverse (Vr) (Max) : 200V

Operating Junction Temperature Range : -

Pd - Power Dissipation : 500mW

Voltage - Forward(Vf@If) : 1.25V@200mA

Current - Rectified : 250mA

Description : Diode Independent 200V 250mA Surface Mount SOD-323

Mfr. Part # : BAV21WS

Model Number : BAV21WS

Package : SOD-323

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Product Overview

The BAV19WS~BAV21WS is a series of silicon epitaxial planar switching diodes designed for surface mount applications. These diodes feature a glass passivated chip junction, a low profile package, and fast reverse recovery time. They are lead-free and comply with the EU RoHS 2011/65/EU directive, making them suitable for environmentally conscious designs.

Product Attributes

Brand: Pingjingsemi
Material: Silicon Epitaxial Planar
Certifications: EU RoHS 2011/65/EU compliant

Technical Specifications

Parameter	Symbol	BAV19WS	BAV20WS	BAV21WS	Unit
Maximum Repetitive Peak Reverse Voltage	VRRM	120	200	250	V
Maximum RMS Voltage	VRMS	100	150	200	V
Continuous Forward Current	IF	250			mA
Repetitive Peak Forward Current	IFRM	625			mA
Non-repetitive Peak Forward Surge Current (t=1s)	IFSM	1			A
Non-repetitive Peak Forward Surge Current (t=1ms)	IFSM	3			A
Non-repetitive Peak Forward Surge Current (t=1s)	IFSM	9			A
Power Dissipation	PD	500			mW
Junction Temperature	TJ	150			C
Storage Temperature Range	TSTG	-55 to +150			C
Reverse Breakdown Voltage (IR=100A)	V(BR)R	120	200	250	V
Maximum Forward Voltage (IF=100mA)	VF	1.0			V
Maximum Forward Voltage (IF=200mA)	VF	1.25			V
Maximum DC Reverse Current (TA=25C)	IR	0.1			A
Maximum DC Reverse Current (TA=150C)	IR	100			A
Typical Junction Capacitance (VR=4V, f=1MHz)	Cj	5			pF
Maximum Reverse Recovery Time (IF=0.5A, Irr=0.25A, IR=1A)	Trr	50			nS

2202211730_PJSEMI-BAV21WS_C2977356.pdf

Lead free silicon diode PJSEMI BAV21WS with fast reverse recovery and low profile surface mount package Images

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